Currently, most industrial THz generation systems are bulky and use high power lasers to excite oscillations in a biased semiconductor such as Gallium Arsenide. These systems are complicated, expensive (>$100,000) and are not very portable. This technology uses a planar Gunn diode semi-conductor device which will produce very high frequency radiation in an accessible and affordable way. It allows a physically small, microchip-based, source to be constructed which can operate at room temperature.